Formation of epitaxial InSb films on semi-insulating GaAs(100) by explosive thermal evaporation: their structure and electrical properties
نویسندگان
چکیده
In the present work, influence of deposition temperature InSb films on semi-insulating GaAs(100) their phase composition, crystal perfection and electrical properties was investigated. The various extent are formed by means explosive thermal substrates in range 375–460 °C. X-ray diffraction analysis established that heteroepitaxial. It is shown an increase from 375 to 460 °C leads a change film surface roughness (Ra) 3.4 19.1 nm. Hall voltage sensitivity magnetic field varies 500–1500 mV/T. electron concentration (n) mobility (μ) changes 2 ⋅ 1016 – 6 cm–3, 10 103 21 cm2/(V s). substrate practical interest for manufacture highly sensitive miniature devices.
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ژورنال
عنوان ژورنال: ?????? ???????????? ???????????????? ????????????
سال: 2021
ISSN: ['2520-6508', '2617-3956']
DOI: https://doi.org/10.33581/2520-2243-2021-3-20-25